METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to prevent the creation of a striation and a void when forming a contact of a semiconductor device. CONSTITUTION: A contact hole is formed by etching a first epilayer and an interlayer dielectric film using a photoresist pattern for forming a contact hole(107) as a mask. And a second epilayer is deposited on the first epilayer including the contact hole. The second epilayer and the first epilayer are planarized by etching until a top surface of the interlayer dielectric film(102) is revealed. And, a spacer(110a) is formed on both side walls of the contact hole by dry etching of the second epilayer film in the contact hole. The method enables to prevent the creation of a striation and to remove the created striation and to prevent the creation of a void during forming a conductive film to fill the contact hole.