METHOD FOR FORMING METAL LINE PATTERN

摘要

PURPOSE: A method for forming a line pattern is provided to remove chlorine in a non-volatile polymer which is evaporated at two sides of an aluminum pattern, so that the aluminum pattern is not oxidized. CONSTITUTION: A metal layer is formed on an insulation layer to form a line pattern. Next, using a photoresist pattern as a mask, the metal layer is etched away by a 1st etching gas comprising a 1st component so that a metal layer pattern is formed. Next, a polymer is formed at two sides of the metal pattern. Next, the photoresist pattern is removed by an etching process. Next, a plasma process to the polymer is performed to remove the 1st component of the polymer.