| 摘要 |
PURPOSE: A semiconductor laser diode array device is provided to prevent a spread-out phenomenon of current and improve an optical waveguide function. CONSTITUTION: A semiconductor laser diode array device includes an n-type GaAs substrate(101) in which a plurality of grooves are formed by a given distance. Each of the grooves has a single bottom face and slant faces on its both sides. An n-type GaAs buffer layer(102), an n-type InGaAlP clad layer(103), an InGaP active layer(104) and a p-type InGaAlP clad layer(113) are sequentially stacked on the n-type GaAs substrate(101). A p-type InGaAlP clad electrify layer(111) is stacked on the slant faces among the flat faces of the n-type clad layer(113) and an n-type InGaAlP current prevent layer(112) is stacked on the flat faces. A p-type InGaP electrify-ease layer(106) and a p-type GaAs cap layer(107) are sequentially stacked on the surface consisting of the p-type InGaAlP clad electrify layer(111) and the n-type InGaAlP current prevent layer(112). A p-type metal(109) and an n-type metal(110) are formed on the p-type GaAs cap layer(107) and below the n-type GaAs substrate(101), respectively. At this time, the n-type InGaAlP clad layer(103), the p-type InGaAlP clad electrify layer(111), the n-type InGaAlP current prevent layer(112) and the p-type InGaAlP clad layer(113) may be made of In0.5(Ga0.3Al0.7)0.5 P material. The InGaP active layer(104) and the p-type InGaP electrify-ease layer(106) may be made of In0.5Ga0.5 P material.
|
