| 摘要 |
PURPOSE: A fabrication method of semiconductor devices having dual gate is provided to simplify the manufacturing process and to improve a reliability by using dual gate having different thickness. CONSTITUTION: A semiconductor substrate(21) having a first region(21a) and a second region(21b) is prepared. A first insulating layer(23) and an oxidation layer(25) are sequentially formed on the first region(21a) of the substrate(21). A second insulating layer(29) is then formed on the second region(21b) of the substrate(21). At this time, the oxidation layer(25) is to be an oxide layer(25a), and the oxide layer(25a) is added to the first insulating layer(23), thereby forming a first gate insulator(35). By using a simple oxidation process, the thickness of the first gate insulator(35) is thicker than that of a second gate insulator(29a).
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