| 摘要 |
PROBLEM TO BE SOLVED: To eliminate moisture contamination at the inside of the device and moreover to reduce the peeling of a thin film from the boundary between a substrate and the thin film without executing plasma treatment. SOLUTION: Before a sputtering device is charged with a substrate, it is treated in a dry nitrogen atmosphere, in the case of the opening of a gate 4 on the atmospheric side of a vacuum spare chamber 2, dry gaseous nitrogen is flowed from the inside of the vacuum spare chamber 2, and, in the case of the exhaust of the vacuum spare chamber 2, it is exhausted at an exhausting rate at which water vapor gas is not liquified by a valve 7 with a movable mechanism for slow exhaust, and it is heated at about 80 to 120 deg.C in a high vacuum of <=1×10-3 Torr before sputter film formation.
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