发明名称 |
In-plane magnetoresistance bridge |
摘要 |
A magnetic field sensor device is disclosed comprising two substantially identical n-doped, high carrier mobility semiconductor films (e.g., InSb films) each containing a pattern of cylindrical holes or antidots that cause the resistance of the respective films to vary depending upon the direction of the in-plane component of an applied magnetic field.
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申请公布号 |
US6075437(A) |
申请公布日期 |
2000.06.13 |
申请号 |
US19980036798 |
申请日期 |
1998.03.09 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
HEREMANS, JOSEPH PIERRE;YANG, JIHUI |
分类号 |
H01L43/06;G01R33/06;G01R33/09;(IPC1-7):H01L43/00 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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