A method for producing a pn-junction

摘要

A method for producing a pn-junction (10) in a semiconductor layer (1) of crystalline SiC for a semiconductor device comprises a step of supplying boron to the surface of said semiconductor layer and heating this layer at a temperature above 1500 DEG C for a sufficient period of time for diffusion of boron atoms into said semiconductor layer for forming a p-type doped sub-layer (5) therein. A contact layer (8) is applied on the p-type doped sub-layer (5).