MULTIBEAM X-RAY ELECTROMAGNETIC-WAVE AMPLIFIER

摘要

electronic engineering; high-frequency and microwave amplifiers and generators. SUBSTANCE: amplifier incorporating provision for electrostatic focusing of electron beams is designed for operation in frequency range of 10-1000 MHz (wavelength 30-0.3 m) and for broad- band frequency control with mode of oscillation or amplification automatically controlled; it is provided with all-metal grounded shells of input and output electrodynamic systems designed to exert direct impact of electromagnetic field on substance at steadily high efficiency and output power level from 1 kW to many megawatts. Multibeam optoelectronic system is designed so that electrode-to-electrode clearances and hole sizes for passing electron beams in gate electrode obey definite equations. Input electrodynamic system of device is made in the form of enclosed conducting space with capacitive gaps and inductive conductors for activating the reaction; each of cathode-to-gate-electrode and gate- electrode-to-anode circuits incorporates at least one additional inductive conductor and at least one additional capacitive gap; capacitances of additional gaps are 20 to 100 times greater than those of cathode-to-gate- electrode and gate-electrode-to-cathode gaps. EFFECT: reduced size and improved gain of device. 7 cl, 6 dwg