发明名称 |
Integrierte Halbleiterschaltungsanordnung |
摘要 |
In an integrated circuit device using a plurality of different power supply voltages, the application of an input voltage exceeding the power supply voltages to an input/output circuit is prevented. When a p-type substrate is used, a plurality n-wells are formed to surround an integrated circuit region on a central portion of the substrate. When an n-type substrate is used, a plurality of p-wells are formed in the same manner. A predetermined power supply voltage is applied to each well to select transistors of the input/output buffer in accordance with the voltage level of an external voltage. <IMAGE> |
申请公布号 |
DE69327357(T2) |
申请公布日期 |
2000.06.08 |
申请号 |
DE1993627357T |
申请日期 |
1993.03.31 |
申请人 |
KABUSHIKI KAISHA TOSHIBA, KAWASAKI;TOSHIBA MICRO-ELECTRONICS CORP., KAWASAKI |
发明人 |
SAKAI, IZUMI;UCHINO, YUKINORI;TANAKA, YASUNORI;MORI, TOSHIAKI |
分类号 |
H01L21/8238;H01L21/822;H01L27/02;H01L27/04;H01L27/092;H01L27/118 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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