发明名称 |
Memory circuit and method of construction |
摘要 |
A memory circuit (10) is provided. The memory circuit comprises a flip-flop (12) and first and second pass gate transistors (14) and (16). The flip-flop (12) also comprises pull down transistors (18) and (20). The gate of each pull down transistor (18) and (20) is doped at a level that is greater than the doping level for each gate of pass gate transistors (14) and (16).
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申请公布号 |
US6072715(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19940279135 |
申请日期 |
1994.07.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOLLOWAY, THOMAS C. |
分类号 |
G11C11/412;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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