ELECTRON BEAM LITHOGRAPHY SYSTEM AND METHOD FOR CONTROLLING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an electron beam lithography system which self-diagnoses the presence/absence of abnormality, such as the proximity effect correction calculating error, etc., and, at the same time, makes abnormal spot specification easier and a method for controlling the system. SOLUTION: An electron beam lithography system 60 is provided with an electron beam lithography means 2 which plots a desired graphic pattern by projecting an electron beam upon the surface of a substrate, and a corrected emitting quantity calculating means 40 which is obtained by correcting the emitting quantity of the electron beam corresponding to the plotted graphic pattern at every small area in a plotting area by taking the influence of proximity effects into account. The system 60 is also provided with a control means 37 which discriminates the operational accuracy of the calculating means 40 by calculating the quantity of the energy stored in the substrate, when the substrate is irradiated with the electron beam with the corrected emitting quantity and an error by comparing the quantity of the energy with a prescribed theoretical value, a displaying means 67, and a data verification supporting means 61 which causes the displaying means 67 to display the visually hierarchized information of the corrected emitting quantity at every small area.