Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layers

摘要

A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process gases (including a halogen-containing source gas) into a processing chamber. A halogen-doped layer is then deposited. The combination of process gases is then changed and a sealing layer deposited which seals the dopant into the halogen-doped layer. The sealing layer may, for example, be a carbon-rich layer or an undoped layer. These steps are repeated until the film reaches a selected thickness.