| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage lateral semiconductor device which is formed on an SOI substrate and improved in ON-state breakdown voltage. SOLUTION: The drain corner 17 of a semiconductor device has a structure where an N+ drain region 11 is surrounded with an N buffer region 14, the N buffer region 14 is surrounded with an N drift region 3, the N drift region 3 is surrounded with a P well region 44, an N+ source region is not formed on the arc 47, an N+ source region 46 is formed on the rectilinear part 48 of the P well region 44, and both the P well region 44 and the N+ source region 46 are surrounded with a P+ contact region 45. A gate oxide film is formed on a part of the N drift region of the N+ source region 46, the P well region 44, and outer peripheral part of the N drift region 3, and a gate electrode is formed on the gate oxide film. As mentioned above, an N+ source reign 6 is not formed, so that an avalanche multiplication is restrained from occurring at the arc 47, and a lateral semiconductor device of this constitution can be improved in ON-state breakdown voltage characteristics.
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