| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and photolithography method by which a resist film can be removed without leaving residues in the edge sections of a substrate, at the time of patterning the resist film on the substrate through silylation. SOLUTION: When a resist film is formed in a prescribed pattern in at least the first area of a substrate having the first area and a second area around the first area through silylation, the formation of a silylated product-containing layer on the surfaces of the side walls of a resist film 40 in the second area is prevented by forming crosslinking sections 41 in the surface layers of the side walls by performing exposure treatment LE or, even when the silylated product-containing layers are formed, by removing the layers before forming a silicon oxide-containing layer. |
