| 摘要 |
The present invention applies a silicon nitride or the like as a mask over portions of a substrate, such as an active region, where oxide growth is undesired. Thereafter, without the formation of a recess in the substrate, a high pressure oxidation process is used to grow an oxide, preferably in a furnace. The oxide thus grows into the non-masked areas of the substrate, as well as over the silicon nitride used as a mask. Thereafter, a chemical-mechanical polish is used to etch away undesired oxide, with the silicon nitride being used as an endpoint to terminate the polish operation.
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