| 摘要 |
PURPOSE: A transistor comprising an extended silicide layer and a manufacturing method thereof are provided to prevent the interface between a below substrate and a silicide layer from being roughed. CONSTITUTION: A transistor comprising an extended silicide layer includes a substrate(1), agate stack(3) formed on an active area of the substrate, first and second impurity layers(4,5) formed between the gate stacks and between the gate stack and a substrate between field oxides(2), a first insulating film pattern(40a), first and second silicide layers, first and second gate spacers(42a,42b). The first insulating film pattern is formed on the side of the gate stack and a part is extended on the first and second impurity layers. The first silicide layer is covered on the entire surface of the upper of the gate stack and a part of the first silicide layer is covered on a part of a side of the gate stack. The second silicide layer is formed on the first and second impurity layers and is contact to the first insulating layer pattern. The first gate spacer is contact to the entire surface of the first insulating layer pattern and, respectively, parts of the first and second silicides. The second gate spacer is contact to the entire surface of the first insulating layer pattern and, respectively, parts of the first and second silicides, but width is uniform.
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