发明名称 |
Substrate processing apparatus |
摘要 |
A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
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申请公布号 |
US6070552(A) |
申请公布日期 |
2000.06.06 |
申请号 |
US19980022880 |
申请日期 |
1998.02.12 |
申请人 |
ANELVA CORPORATION |
发明人 |
MIZUNO, SHIGERU;ISHIHARA, MASAHITO;NUMASAWA, YOICHIRO;TAKAHASHI, NOBUYUKI |
分类号 |
C23C16/44;C23C16/455;C23C16/50;C23C16/509;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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