发明名称 |
Co-Ti ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF |
摘要 |
A method of manufacturing a Co-Ti alloy sputtering target containing not more than 100 ppm of oxygen and having a grain size of not larger than 50 mu m, comprising forming a Co-Ti alloy ingot by vacuum-melting and casting a Co-Ti alloy containing 0.5 to 20 wt.% of Ti, and then hot-working the ingot. The Co-Ti alloy sputtering target containing the above small amount oxygen is useful for forming a sputtering thin film which is excellent in film-forming uniformity and has few particles.
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申请公布号 |
WO0031316(A1) |
申请公布日期 |
2000.06.02 |
申请号 |
WO1999JP03479 |
申请日期 |
1999.06.29 |
申请人 |
JAPAN ENERGY CORPORATION;TAKAHASHI, KAZUSHIGE;MIYASHITA, HIROHITO |
发明人 |
TAKAHASHI, KAZUSHIGE;MIYASHITA, HIROHITO |
分类号 |
C22C19/07;C23C14/34;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C22C19/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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