发明名称 |
Semiconductor laser, semiconductor device and their manufacturing methods |
摘要 |
<p>In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 DEG C to 760 DEG C. <IMAGE></p> |
申请公布号 |
EP1005123(A2) |
申请公布日期 |
2000.05.31 |
申请号 |
EP19990123020 |
申请日期 |
1999.11.19 |
申请人 |
SONY CORPORATION |
发明人 |
ASANO, TAKEHARU;ASATSUMA, TSUNENORI;HINO, TOMONORI;TOMIYA, SHIGETAKA;YAMAGUCHI, TAKASHI;KOBAYASHI, TAKASHI |
分类号 |
H01S5/00;H01S5/22;H01S5/223;H01S5/227;H01S5/30;H01S5/323;H01S5/343;(IPC1-7):H01S5/323;H01L33/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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