发明名称 Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid
摘要 When producing an oxide-series single crystal by continuously pulling downwardly by mu pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.
申请公布号 DE69605507(T2) 申请公布日期 2000.05.31
申请号 DE1996605507T 申请日期 1996.08.23
申请人 NGK INSULATORS, LTD. 发明人 IMAEDA, MINORU;IMAI, KATSUHIRO;FUKUDA, TSUGUO
分类号 G02F1/35;C30B15/00;C30B15/08;C30B15/20;C30B29/30;G02F1/355;H01S3/109 主分类号 G02F1/35
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