DEPOSITION OF SILICON NITRIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To deposit a silicon nitride film with high thickness distribution uniformity at high rate using single wafer PECVD. SOLUTION: A single substrate 35 is supported on a pedestal in a chamber and heated at 650-850 deg.C while regulating the pressure to at least 5-100 Torr. A preceding gas mixture comprising silane and ammonia is then passed in the direction parallel with the surface of the substrate 35 in the chamber thus depositing a stoichiometric thin silicon nitride film having uniform thickness on the substrate.