| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents crosstalk from occurring between intellectual property function blocks or elements, which are formed isolatedly on a common substrate, and its manufacturing method. SOLUTION: A sapphire film 50 is provided on a glass substrate 1, a single crystal silicon layer 7 is subjected to epitaxial growth from a silicon/indium fluxing liquid layer 6 on the sapphire film, specific treatment is made to the single crystal silicon layer, and a semiconductor device for IPIC where intellectual property function blocks or elements are isolated is formed.
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