| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a trench capacitor with no void occurrence, drop of capacitance, or degradation in reliability of an insulating film. SOLUTION: A semiconductor substrate 30 comprising a trench groove 31, a capacitor insulating film 32 formed on the inside surface of the trench groove, and a capacitor electrode of a conductive material comprising such impurities as embedded in the trench groove where a capacitor insulating film is formed on the inside surface are provided. The conductive material constituting the capacitor electrode has such concentration gradient as the impurity concentration is lower at a trench lower part than at a trench upper part. |
