| 摘要 |
PROBLEM TO BE SOLVED: To provide a contact plug with an inner diameter of 0.5μm or less which is still stable even after being heated at 800 deg.C or higher and is lower in resistance than that using a polycrystalline silicon single body, as well as a semiconductor device having the same. SOLUTION: A conductive material in a contact hole with a maximum diameter of 0.5μm or less which is formed in an insulation film 7 on a semiconductor substrate 1, is allowed to react with a polycrystalline silicon 10 and a cobalt 12 in solid phase, and the unreacted cobalt is removed selectively, so that a contact plug containing a cobalt silicide 13 is formed. Further, an upper wiring above the insulation film connecting with the contact hole is formed as a wiring containing the cobalt silicide by the same method together with the contact plug.
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