发明名称 |
INITIAL STABILIZATION SIGNAL-GENERATING CIRCUIT OF SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide an initial stabilization signal-generating circuit of a semiconductor memory which can generate an initial stabilization signal for preventing an access from the outside before an internal power source voltage level is normalized. SOLUTION: The circuit has an external power source voltage level-sensing part 100 which senses an external power source voltage VDD and generates an external power source sense signal PUPB1 when the external power source voltage VDD becomes a predetermined voltage level, an internal power source voltage level-sensing part 200 which senses an internal power source voltage VINT and generates an internal power source sense signal PUPB2 when the internal power source voltage VINT becomes a predetermined voltage level, and an initial stabilization signal-generating part 300 which receives the internal power source sense signal PUPB1 and the external power source sense signal PUPB2 and generates an initial stabilization signal SETB of a 'low' level at a fall edge of the internal power source sense signal PUPB2.
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申请公布号 |
JP2000149555(A) |
申请公布日期 |
2000.05.30 |
申请号 |
JP19990256680 |
申请日期 |
1999.09.10 |
申请人 |
HYUNDAI MICROELECTRONICS CO LTD |
发明人 |
DON-KEUM KAN |
分类号 |
G11C11/413;G11C5/14;G11C7/20;G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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