发明名称 INITIAL STABILIZATION SIGNAL-GENERATING CIRCUIT OF SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide an initial stabilization signal-generating circuit of a semiconductor memory which can generate an initial stabilization signal for preventing an access from the outside before an internal power source voltage level is normalized. SOLUTION: The circuit has an external power source voltage level-sensing part 100 which senses an external power source voltage VDD and generates an external power source sense signal PUPB1 when the external power source voltage VDD becomes a predetermined voltage level, an internal power source voltage level-sensing part 200 which senses an internal power source voltage VINT and generates an internal power source sense signal PUPB2 when the internal power source voltage VINT becomes a predetermined voltage level, and an initial stabilization signal-generating part 300 which receives the internal power source sense signal PUPB1 and the external power source sense signal PUPB2 and generates an initial stabilization signal SETB of a 'low' level at a fall edge of the internal power source sense signal PUPB2.
申请公布号 JP2000149555(A) 申请公布日期 2000.05.30
申请号 JP19990256680 申请日期 1999.09.10
申请人 HYUNDAI MICROELECTRONICS CO LTD 发明人 DON-KEUM KAN
分类号 G11C11/413;G11C5/14;G11C7/20;G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/413
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