| 摘要 |
A number of waiting deflections and a connection error between shots can be reduced by scanning and exposing a formed beam having a large area. A continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. Accordingly, the number of awaiting deflections and the connection error between shots are reduced. Further, a high-speed and highly accurate drawing of a 45 DEG slanted figure is made possible.
|
