发明名称 |
Device for sensing data in a multi-bit memory cell using a multistep current source |
摘要 |
A device and method for sensing data in a multi-bit memory cell of a memory cell array unit is provided where each memory cell has at least two threshold voltage levels. The device can include a multistep current source unit to provide quantized voltages, each having a width smaller than a threshold voltage distribution in a selected memory cell, according to a current flowing through the selected memory cell. An analog-to-digital converter compares the quantized voltages from the multistep current source unit with a plurality of reference voltages to provide a state of the memory cell in binary form. The device and method for sensing data in the multi-bit memory cell uses the quantized voltages to increase sensing reliability, increases sensing speed and increases a gap between the quantized voltages relative to the threshold voltage distribution.
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申请公布号 |
US6069821(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19990427273 |
申请日期 |
1999.10.26 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JUN, SI BUM;KIM, DAE MANN;CHOI, WOONG LIM |
分类号 |
G11C16/02;G11C11/56;G11C16/00;G11C16/06;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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