发明名称 SOI HIGH BREAKDOWN VOLTAGE POWER DEVICE
摘要 PROBLEM TO BE SOLVED: To assure the breakdown voltage of a multilayer interconnection structure by using a silicone ladder group resin for an interlayer insulating film. SOLUTION: As an interlayer insulating film 15, a silicone ladder group resin which comprises such characteristics as low stress, and high dielectric breakdown electric field is used. Thus, such etching is possible as to keep tapered form wherein the cross section of the pattern of the interlayer insulating film 15 is trapezoidal. So, a finished dimension is appropriately controlled. Further, the possibility for causing disconnection of a second aluminum wiring 16 in response to a thicker film is eliminated. By cutting, out of a field oxide film 10 interface, a part fixing an electric field at a capacity coupling part of the second aluminum wiring 16 by thickening the interlayer insulating film 15, the intensity of electric field concentrating just below a field oxide film 10 is relaxed. Thus, a breakdown voltage is improved.
申请公布号 JP2000150501(A) 申请公布日期 2000.05.30
申请号 JP19980323398 申请日期 1998.11.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 YASUDA NAOKI;YAMAMOTO SHIGEYUKI;AKIYAMA HAJIME
分类号 H01L21/768;C08L83/04;H01L21/312;H01L23/522;H01L29/786;(IPC1-7):H01L21/312 主分类号 H01L21/768
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