| 摘要 |
PROBLEM TO BE SOLVED: To extend the impedance-variable function of an FET, and at the same time to miniaturize a semiconductor circuit of a semiconductor phase shifter and a semiconductor amplifier and the like and to increase functions. SOLUTION: A field effect transistor is provided with a waveguide finger 16 where one end is connected to either a drain or source electrode by bridging, and the other end is connected to the other electrode in a structure being connected or extended by bridging as in the above one end, and a gate electrode finger 11 that is divided into two portions between a drain electrode finger 9 that is adjacent to the waveguide finger 16 or a source electrode finger 10, thus applying a bias independently of the divided gate electrode finger 11.
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