发明名称 |
Method for forming a junctionless antifuse |
摘要 |
A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.
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申请公布号 |
US6069064(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19960702951 |
申请日期 |
1996.08.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CUTTER, DOUGLAS J.;HO, FAN;BEIGEL, KURT D. |
分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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