| 摘要 |
PURPOSE:To provide a semiconductor device wherein discontinuity due to oxidation corrosion is not generated in the electrode and the bonding wire of a semiconductor element, which can be normally and stably operated for a long term, and the molding property of an insulating substratum and covering material is excellent. CONSTITUTION:The semiconductor device is constituted by air-tightly containing a semiconductor element 3 in a vessel 4 constituted of an insulating substratum 1 of resin and a lid body 2. Filler of 60-95wt.% is buried in the insulating substratum 1 of resin. Fine holes whose volume is 0.1-2.0ml/g are formed for the filler of 5-30wt.%. |
