发明名称 OXIDE THIN FILM
摘要 PROBLEM TO BE SOLVED: To enable an oxide thin film to indicate a wide gap, namely transparent p-type conductivity by forming a thin film using SrCu2O2. SOLUTION: An oxide thin film is provided with at least a substrate and an oxide thin film containing strontium oxide and copper oxide being formed on the substrate. Also, to increase p-type conductivity, it is preferable that the ratio of Sr/Cu is shifted, or K is doped. As the composition of the oxide thin film containing the strontium oxide and copper oxide, SrCu2O2 composition and composition where K is added to the SrCu2O2 composition are used. Although SrCu2O2 is generally in the ratio of Sr:Cu:O=1:2:2, the ratio of elements in oxide is set to Sr/Cu=0.8 to 1.3, and O/(Sr+Cu)=0.55 to 0.75, and is preferably set to Sr/Cu=0.9 to 1.2, and O/(Sr+Cu)=0.65 to 0.70.
申请公布号 JP2000150861(A) 申请公布日期 2000.05.30
申请号 JP19980342364 申请日期 1998.11.16
申请人 TDK CORP;KAWAZOE HIROSHI 发明人 KAWAZOE HIROSHI;HOSONO HIDEO;KUDO ATSUSHI;YANAGI HIROSHI
分类号 H01L29/12;C03C17/23;C23C14/08;H01L51/50;(IPC1-7):H01L29/12 主分类号 H01L29/12
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