| 摘要 |
PROBLEM TO BE SOLVED: To enhance gas sensitivity, realized a sensor with small heat capacity and solve the problem of the peeling between a sensitive layer electrode and an insulating layer by providing, between the insulating layer and the sensitive layer electrode, an electrode connecting layer consisting of a metal excellent in adhering property with the insulating layer and minimized in diffusion on the sensitive layer electrode. SOLUTION: On a Si substrate having thermally oxidized films on both sides, Si3N4 and SiO2 films are successively formed by a plasma CVD method as a support film for diaphragm structure and a heat insulating film to form a support layer 1. A Ni-Cr heater layer 2 and a SiO2 insulating layer 3 are formed thereon in this order by sputtering, and a connecting layer 4 and a sensitive layer electrodes 5 are further formed thereon. The filming condition is set, for both the connecting layer 4 and the sensitive layer electrode 5, to for example Ar gas pressure 1P, substrate temperature 300 deg.C, RF power 2W/cm2, and film thickness of connecting layer/sensitive layer electrode = 500Å/2000Å. A SnO2 layer 10 forming a sensitive layer sensitive to gas is then formed, and Si is finally removed from the substrate surface by etching to form a diaphragm structure.
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