| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device capable of forming a metallic film of high film quality at a high film forming rate without giving damage to the body to be treated and to provide a film forming method. SOLUTION: This film forming device is formed of a chamber l to be stored with a semiconductor wafer W, an organometallic compd. feeding system 15 feeding an organometallic compd. to the inside of the chamber l, a plasma generating chamber 17 provided separately from.? the chamber l, a plasma generating means 21 applying the electric field to the plasma generating chamber 17 and plasmatizing hydrogen introduced into the plasma generating chamber 17, many hydrogen radical introducing passages 22 introducing hydrogen radicals from the plasma generating chamber 17 into the chamber and a heating means 5 heating a semiconductor wafer W, decomposing the organometallic compd. and depositing a metallic film on the semiconductor wafer W. The inner wall of the hydrogen radical introducing passage 22 is formed of an insulating member to prevent the dissipation of the hydrogen radicals.
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