CVD DEVICE AND CVD METHOD

摘要

PROBLEM TO BE SOLVED: To execute film formation by using raw materials preferable respectively in two CVD processes with different film forming conditions in CVD film formation for a copper film for wiring, to realize satisfactory burying characteristics and a high film forming rate and to improve film forming efficiency and film quality. SOLUTION: This CVD device forming a copper film for wiring on a substrate is provided with a 1st CVD module 15 forming a copper film as a base by using a Cu(hfac)(tmvs) raw material low in a film forming rate and a 2nd CVD module 16 executing film formation of thickening a copper film by using a Cu(hfac)(atms) raw material high in a film forming rate. The film forming rate of the Cu(hfac)(tmvs) raw material is controlled to about 10 nm/min, and the film forming rate of the Cu(hfac)(atms) raw material is controlled to about 400 nm/min. The CVD device for mass production attaining both of high film forming efficiency and film quality and having practicality can be realized.