发明名称 |
PRODUCTION OF ELECTRODE WIRING CONDUCTION HOLE AND PRODUCTION OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for producing electrode wiring conduction holes capable of forming the small electrode wiring conduction holes in a semiconductor element and a process for producing a semiconductor device. SOLUTION: The hole patterns for the electrode wiring conduction holes are transferred to a thin film of the photosensitive material on a wafer by projecting the first light transmitted through translucent regions consisting of a translucent film 4 and the second light which is transmitted through the apertures consisting of the translucent parts 3 disposed in the translucent regions and is the antiphase from the phase of the first light through a lens.</p> |
申请公布号 |
JP2000147746(A) |
申请公布日期 |
2000.05.26 |
申请号 |
JP20000007857 |
申请日期 |
2000.01.17 |
申请人 |
HITACHI LTD |
发明人 |
HASEGAWA NORIO;TANAKA TOSHIHIKO |
分类号 |
H01L21/027;G03F1/32;G03F1/68;(IPC1-7):G03F1/08 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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