| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a sputtering device and a semiconductor device improving the using efficiency of a target, simultaneously excellent in the uniformity of a film forming distribution and capable of obtaining a high bottom coverage. SOLUTION: A magnet system 106 is revolved by a 1st revolving mechanism 123 with a prescribed center axis as the center of rotation, and, furthermore, synchronously with the revolution of the magnet system 106, a wafer substrate 102 is revolved by a 2nd revolving mechanism 121. By the revolution of the magnet system 106, the whole face of the target 105 is used without inclination to improve its using efficiency, the wafer 102 is revolved synchronously with the revolution of the magnet system 106, as the magnet 107 in the magnet system 106, the one scattering sputtered particles vertically to the face of the wafer substrate 102 can be used, the uniformity of a film forming distribution is made excellent, and a film high in a bottom coverage can be formed on the bottom part of a hole.
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