PURPOSE: A method for manufacturing a pressure sensor is to prevent metallic film from undercutting by etchant, thus obtaining improvements of both process reliance and yield. CONSTITUTION: A method for manufacturing pressure sensor comprises the steps of: forming a multilayered metallic film(202) on the back face of a silicone wafer(200); applying a first mask pattern onto the metallic film to be exposed some center portions of the metallic film; eroding the exposed portions of metallic film using etchant so as to be exposed some surface of silicone wafer; removing the first mask pattern from the silicone wafer; applying a second mask pattern(206) onto some back face of the silicone wafer to be surrounded upper and side faces of the metallic film; and eroding the exposed back face of the silicone wafer using etchant to form a diaphragm.
申请公布号
KR20000028198(A)
申请公布日期
2000.05.25
申请号
KR19980046358
申请日期
1998.10.30
申请人
KOREA ELECTRONICS CO., LTD.
发明人
CHOI, YEON SIK;SONG, JONG GYU;LEE, WON O;LEE, GEUN HYEOK;PARK, JUNG EON