FORMING METHOD OF SEMICONDUCTIVE EPITAXIAL LAYER ON METAL STRUCTURE

摘要

PURPOSE: A method is provided to continuously prepare integrated electronic devices formed of monocrystalline semiconductor and metal as well as of standard element such as dopant or grown or deposited insulator. CONSTITUTION: A substrate(1) is positioned in a reactor having base pressure at a super high vacuum range. Then, the temperature of the substrate is raised to be high. Precursor gas without halogen of the particles containing semiconductor material is flowed on the substrate. Then, an epitaxial layer(3) of the semiconductor material is formed on a metal structure(2). Herein, the super heat is sufficient to the blank cleansed substrate of the semiconductor material positioned in the reactor. Moreover, the epitaxial layer of the semiconductor material is formed on the metal structure to be epitaxially grown on the blank cleaned substrate by the flux over 1.0 angstrom per minute. Herein, the metal structure is affected by the inflow of the precursor gas.