Halbleiterbauelement mit dielektrischen oder halbisolierenden Abschirmstrukturen

摘要

The inventive semiconductor component consists of a first layer (2) and at least one adjacent semiconductor or metallic layer, which forms a rectifying junction with the first layer (2). Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures (7) are introduced into the first layer (2) in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction.