METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for producing a semiconductor device is provided to reduce the number of preparation processes without need of transfer gate sacrificial oxide and to reduce divot, degradation and defects of an isolation part. CONSTITUTION: A producing method comprising: forming an oxide layer(2) on a semiconductor device substrate(1); forming a silicon nitride layer(3) on the oxide layer; forming an isolation area(4) in the substrate; removing the silicon nitride layer; injecting dopant ions into the substrate by using the oxide layer as a screen; forming a gate oxide layer(9) on the substrate after removing the oxide layer; filling in the isolation area with TEOS(Tetraethylorthosilicate), other oxides or insulators; and polishing the TEOS, other oxides or the insulators.