| 摘要 |
PURPOSE: A method is provided to improve the productivity of a semiconductor device by using an exposure mask having a larger opening or a hole. CONSTITUTION: To fabricate a semiconductor device having a capacitor contact hole, a first insulating film(4) is formed to cover a gate electrode(7) and a source/drain region(6). And, a second insulating film(8) is formed on the first insulating film, and a third insulating film is formed on the second insulating film. Herein, the third insulating film is made up of a material different from the second insulating film. Then, a first resist film is formed on the third insulating film with a first exposure mask for selectively eliminating the third insulating film. A second resist film is formed to cover the patterned first resist film, and the patterned second resist film is formed by patterning the second resist film. A capacitor contact hole is formed by selectively eliminating the first and the second insulating films on at least one portion of the source/drain region in each element forming region. Then, the capacitor contact hole is filled by forming a conductive film(13).
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