| 摘要 |
PURPOSE: A device and a fabricating method of a semiconductor device are provided to easily form a local interconnection and to prevent the leakage of current. CONSTITUTION: To fabricate a semiconductor device, a gate insulating film(13) of a transistor is formed on the surface of a substrate(11). And, a gate electrode(15) is formed on the gate insulating film to form an insulating film(16) covering the gate insulating film and the gate electrode. Amorphous semiconductor layers are deposited onto the surface of the substrate. Then, the amorphous semiconductor layers are selectively grown to form a monocrystalline semiconductor layer in the selected part of the amorphous semiconductor layers. A resist layer is formed at the interconnection part of the amorphous semiconductor layers for removing the portion of the amorphous semiconductor layers excepting the portion placed in the interconnection part. And, the resist layer is removed for depositing a metal layer onto the monocrystalline semiconductor layer and onto the portion of the amorphous semiconductor layer. Then, a selicide layer(20) is formed by selecting the metal layer.
|
