METHOD OF MANUFACTURING ELECTRONIC DEVICE

摘要

PURPOSE: A method of manufacturing an electronic device is provided to prevent the etchant for the silicon oxide layer form attacking the conductor material of the gates and to prevent short-circuits while very narrow gaps between the conductor tracks are retained. CONSTITUTION: A conductor layer is covered with a comparatively thick dielectric layer(4,5)in which windows are formed which extend over only part of the dielectric layer. Then an auxiliary layer is provided which has depressions at the areas of the windows. Windows are formed in the dielectric layer by anisotropic etching-back with dimensions which are substantially smaller than the dimensions of the original windows. The windows can be used as etching windows or oxidation windows for the subsequent formation of the definitive conductor pattern.