FORMING METHOD FOR PITCHER, BURIED BIT LINE, BURIED PLATE, HORIZONTAL SURFACE SPACER ON SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for forming a horizontal surface spacer is provided to be self aligned on a horizontal surface while removing all spacer material on a vertical surface. CONSTITUTION: A trench is formed in a substrate to have a bottom and a side wall, and a dopant source layer is formed on the substrate for covering the bottom and the side wall of the trench. A resist layer is formed on the dopant source layer to cover the dopant source layer on the bottom and the side wall of the trench, and the resist layer is exposed. Herein, the resist layer is exposed in a certain angle for exposing the upper end of the resist layer on the side wall while not exposing the lower end of the resist layer on the side wall. Then, the exposed resist layer and the dopant source layer in the lower part of the exposed resist layer are removed. Moreover, a pitcher is formed on the semiconductor substrate by diffusing the dopant from the residual dopant source layer to the substrate.