| 摘要 |
1,002,725. Semi-conductor devices. CLEVITE CORPORATION. Jan. 3, 1963 [Feb. 6, 1962], No. 361/63. Heading H1K. A semi-conductive element is provided with a lead wire formed of a core of relatively hard metal with an adherent coating of a relatively soft metal, attached to the element by thermocompression bonding. In the embodiment (Fig. 2) a semi-conductor element of silicon 22 is gold-alloyed to a header member (Fig. 1, not shown), and has a base region 24 formed in its surface by diffusion of boron into the element, and an emitter region 26 formed by diffusion of phosphorus. The diffusion areas may be defined by a SiO 2 mask pattern 29. Two aluminium strips 28 and 30 are provided on the element to which electrode connection is made by a molybdenum wire 10 having a gold coating 11 by a thermo-compression bonding technique. A portion of exposed molybdenum core 34 is subjected to a hydrogen peroxide etch to separate the electrode connections. The wire core may be nickel or tungsten with a silver coating. |
