| 摘要 |
In a delay-power-source-coefficient determining step, a drain saturation current in a P-channel MOSFET is calculated on the basis of specified operating power-source voltage data and of saturation-current parameters such as the mobility of carriers and the thickness of a gate oxide film based on said specified operating power-source voltage data. Thereafter, a ratio of a drain saturation current in the P-channel MOSFET when a reference power-source voltage is applied thereto to the drain saturation current in the P-channel MOSFET when an operating power-source voltage is applied thereto, thereby determining a delay power-source coefficient. Next, in an effective-delay calculating step, effective-delay calculating means multiplies a delay time when the reference power-source voltage calculated by the delay calculating means is applied thereto by the delay power-source coefficient calculated by delay-power-source-coefficient determining means to determine a delay time at the operating power-source voltage.
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