| 摘要 |
<p>A reverse conducting thyristor such that heat generated due to power loss is not accumulated in a rubber piece for protection against end face field, and the case housing a semiconductor substrate is simplified. The reverse conducting thyristor (100) has a self-extinguishing thyristor region (R1) provided in the inside region of the semiconductor substrate, one or more reverse conducting diode region (R3) provided outside the region (R1) and surrounded completely by an isolation region (R2), and an external lead-out gate electrode region (R4) provided in the outermost circumferential region of the semiconductor substrate. A gate electrode (3A) provided on the surface of a gate part layer (7) in the self-extinguishing thyristor region (R1) is connected with an external lead-out gate electrode (3C) formed along the outermost circumference of the substrate through a gate wiring pattern (3B) formed on the surface in a connecting region (R5).</p> |
