发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.
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申请公布号 |
US6064611(A) |
申请公布日期 |
2000.05.16 |
申请号 |
US19980055216 |
申请日期 |
1998.04.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA, TOMOHARU;NAKAMURA, HIROSHI;TANZAWA, TORU |
分类号 |
G11C16/06;G11C11/56;G11C16/02;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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