发明名称 ELECTRON BEAM LITHOGRAPHY SYSTEM
摘要 PROBLEM TO BE SOLVED: To position an electron beam from a sub-field to a semiconductor wafer with an accuracy of 1 nm by deflecting the center line of the electron beam from each sub-field within a range from the electron optical axis of an electron lens system. SOLUTION: An electron beam 126 from each sub-field of a reticle 102 is outputted to an electron lens system 104, and the electron beam 126 from the reticle 102 is deflected to a first part 128 of the electron lens system 104 and is matched to an electron optical axis 130 of the electron lens system 104. Then, the beam 126 from the first part 128 of the electron lens system 104 is reduced by a second part 132 of the electron lens system 104. Further, the electron beam 126 from the second part 132 of the electron lens system 104 is deflected to an appropriate region of a wafer 106 by a third part 134 of the electron lens system 104.
申请公布号 JP2000138166(A) 申请公布日期 2000.05.16
申请号 JP19990294981 申请日期 1999.10.18
申请人 NIKON CORP 发明人 STUMBO DAVID P
分类号 H01L21/027;G03F7/20;H01J37/147;H01J37/317;(IPC1-7):H01L21/027 主分类号 H01L21/027
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